TPD4E6B06
制造商:
分类: 半导体分立器件和附件 / 二极管 / 普通二极管 / 瞬态抑制二极管
描述: 采用 0.5mm 间距、0.64mm2 SON 封装的四路 4.8pF、±5.5V、±15kV ESD 保护二极管
物料参数
| Package name: | DFN0603 |
| Peak pulse power (8/20 μs) (max) (W): | 40 |
| Vrwm (V): | 5.5 |
| Bi-/uni-directional: | Bi-directional |
| Number of channels: | 4 |
| IO capacitance (typ) (pF): | 4.8 |
| IEC 61000-4-2 contact (±V): | 15000 |
| IEC 61000-4-5 (A): | 3 |
| Clamping voltage (V): | 10 |
| Dynamic resistance (typ): | 0.75 |
| Interface type: | Memory/SIM Card |
| Breakdown voltage (min) (V): | 6 |
| IO leakage current (max) (nA): | 100 |
| Rating: | Catalog |
| Operating temperature range (°C): | -40 to 125 |
| Package name: | DFN0603 |
| Peak pulse power (8/20 μs) (max) (W): | 40 |
| Vrwm (V): | 5.5 |
| Bi-/uni-directional: | Bi-directional |
| Number of channels: | 4 |
| IO capacitance (typ) (pF): | 4.8 |
| IEC 61000-4-2 contact (±V): | 15000 |
| IEC 61000-4-5 (A): | 3 |
| Clamping voltage (V): | 10 |
| Dynamic resistance (typ): | 0.75 |
| Interface type: | Memory/SIM Card |
| Breakdown voltage (min) (V): | 6 |
| IO leakage current (max) (nA): | 100 |
| Rating: | Catalog |
| Operating temperature range (°C): | -40 to 125 |